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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 DESCRIPTION With TO-126 package High voltage,high speed APPLICATIONS For high speed and high voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IN Collector-base voltage PARAMETER Collector-emitter voltage Emitter-base voltage ANG CH MIC E SE Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 500 400 10 0.5 1.0 UNIT V V V A A Collector current Collector current-peak Ta=25ae 0.75 W 10 150 -55~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Collector cut-off current CONDITIONS IC=0.1A; RBE= IE=10mA; IC=0 IC=250mA; IB=50m A IC=250mA ;IB=50m A IC=250mA ; VCE=5V IC=500mA ; VCE=5V VCB=400V; IE=0 VCE=350V; RBE= 15 7 ,L=100mH MIN 400 10 2SC2899 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 ICBO ICEO TYP. MAX UNIT V V 1.0 1.5 V V 20 |I |I A A Switching times ton tstg tf Fall time CHA IN Storage time Turn-on time E SEM NG OND IC TOR UC 50 1.0 2.0 1.0 |I |I |I s s s IC=0.5A; IB1=-IB2=0.1A VCCO 150V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2899 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 CHA IN E SEM NG OND IC TOR UC 4 |
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